TOSHIBA

SUBSTRATES COMPRISED MAINLY OF SILICONE NITRIDE FOR USE IN MACHINERY FOR THE ELECTRONIC AND SEMICONDUCTOR INDUSTRIES

METAL WIRES, METAL POWDERS FOR USE IN THE MANUFACTURE OF FILAMENTS, METAL DISC FOR USE IN THE MANUFACTURES OF PLATES TO SUPPORT SEMICONDUCTOR MODULES; CERAMIC SUBSTRATES COMPRISED OF ALUMINUM OXIDE OR ALUMINUM NITRIDE AND INTENDED FOR USE IN THE MANUFACTURE OF SUBSTRATES TO SUPPORT SEMICONDUCTORS; AMORPHOUS CORES COMPRISED OF COBALT OR IRON, AND CONTAINED SILICON AND BORON FOR USE IN THE MANUFACTURE OF MAGNETIC CORE FOR USE IN ELECTRONIC COMPONENTS

BALL BEARINGS USED AS A PART OF A MACHINE OR AN APPARATUS TO REDUCE FRICTION USED IN ENGINEERING CERAMIC APPLICATIONS

INTEGRATED CIRCUIT MEMORY CARDS; [INTEGRATED CIRCUIT MEMORY CARD READERS AND/OR WRITERS; MAGNETS COMPRISED OF SAMARIUM AND COBALT; MAGNETS COMPRISED OF SAMARIUM, IRON, AND NITROGEN]