SUB-CYCLE RESPONSE

Integrated circuits, namely, metal-oxide-semiconductor (MOS) circuits; multi-chip integrated circuit modules; electric and/or electronic sensors for light intensity, acceleration, compression, pressure, and distance; microsystems, namely, application-specific integrated circuits (ASICs); integrated circuits in the nature of application-specific standard electronic products (ASSPs); memory integrated circuits, namely, static random access memory (SRAM) circuits, dynamic random access memory (DRAM) circuits, and non-volatile static random access memory (NVSRAM) circuits; memory expansion modules; structured semi-conductor discs; telephone transmitters

Design and development of metal-oxide-semiconductor (MOS) circuits, multi-chip integrated circuit modules, electric and/or electronic sensors for light intensity, acceleration, compression, pressure, and distance, microsystems consisting primarily of micro-processors and micro-computers, customized integrated circuits in the nature of application-specific integrated circuits (ASICs), integrated circuits in the nature of application-specific standard electronic products (ASSPs), memory integrated circuits in the nature of static random access memory (SRAM) circuits, dynamic random access memory (DRAM) circuits, and non-volatile static random access memory (NVSRAM) circuits, memory expansion modules, and structured semi-conductor discs; laboratory research in the field of chemistry and physics; engineering services; scientific research; industrial research in the field of physics; computer programming